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    PIEZOELECTRIC MATERIAL COMPOSITION, METHOD OF MANUFACTURING THE SAME, PIEZOELECTRIC DEVICE, AND APPARATUS INCLUDING THE PIEZOELECTRIC DEVICE

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    A piezoelectric device may include a piezoelectric device layer including a first material and a second material surrounded by the first material, a first electrode portion disposed at a first surface of the piezoelectric device layer, and a second electrode portion disposed at a second surface of the piezoelectric device layer opposite to the first surface. The piezoelectric device layer is represented by Formula 1 "0.96(NaaK1-a)(Nbb(T1-b))O3 - (0.04-x)MZrO3 - x(BicAg1-c)ZrO3( + d mol% NaNbO3", wherein T is Sb or Ta, M is Sr, Ba or Ca, 0.4 ≤ a ≤ 0.6, 0.90 ≤ b ≤ 0.98, 0.4 ≤ c ≤ 0.6, 0 ≤ d ≤ 5.0, and 0 ≤ x ≤ 0.04.

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    PIEZOELECTRIC MATERIAL COMPOSITION, METHOD OF MANUFACTURING THE SAME, PIEZOELECTRIC DEVICE, AND APPARATUS INCLUDING THE PIEZOELECTRIC DEVICE

    New search for: LEE YONGWOO
    New search for: PARK SEUNGRYULL
    New search for: HAM YONG-SU
    New search for: KHO YUSEON
    New search for: SUNG SEUNGHYUN
    New search for: NAHM SAHN
    New search for: KIM DAE-SU
    New search for: SHIN HOSUNG
    New search for: EUM JAE MIN
    New search for: GO SU-HWAN

    A piezoelectric device may include a piezoelectric device layer including a first material and a second material surrounded by the first material, a first electrode portion disposed at a first surface of the piezoelectric device layer, and a second electrode portion disposed at a second surface of the piezoelectric device layer opposite to the first surface. The piezoelectric device layer is represented by Formula 1 "0.96(NaaK1-a)(Nbb(T1-b))O3 - (0.04-x)MZrO3 - x(BicAg1-c)ZrO3( + d mol% NaNbO3", wherein T is Sb or Ta, M is Sr, Ba or Ca, 0.4 ≤ a ≤ 0.6, 0.90 ≤ b ≤ 0.98, 0.4 ≤ c ≤ 0.6, 0 ≤ d ≤ 5.0, and 0 ≤ x ≤ 0.04.

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    PIEZOELECTRIC MATERIAL COMPOSITION, METHOD OF MANUFACTURING THE SAME, PIEZOELECTRIC DEVICE, AND APPARATUS INCLUDING THE PIEZOELECTRIC DEVICE

    New search for: LEE YONGWOO
    New search for: PARK SEUNGRYULL
    New search for: HAM YONG-SU
    New search for: KHO YUSEON
    New search for: SUNG SEUNGHYUN
    New search for: NAHM SAHN
    New search for: KIM DAE-SU
    New search for: SHIN HOSUNG
    New search for: EUM JAE MIN
    New search for: GO SU-HWAN

    A piezoelectric device may include a piezoelectric device layer including a first material and a second material surrounded by the first material, a first electrode portion disposed at a first surface of the piezoelectric device layer, and a second electrode portion disposed at a second surface of the piezoelectric device layer opposite to the first surface. The piezoelectric device layer is represented by Formula 1 "0.96(NaaK1-a)(Nbb(T1-b))O3 - (0.04-x)MZrO3 - x(BicAg1-c)ZrO3( + d mol% NaNbO3", wherein T is Sb or Ta, M is Sr, Ba or Ca, 0.4 ≤ a ≤ 0.6, 0.90 ≤ b ≤ 0.98, 0.4 ≤ c ≤ 0.6, 0 ≤ d ≤ 5.0, and 0 ≤ x ≤ 0.04.

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    Title:

    PIEZOELECTRIC MATERIAL COMPOSITION, METHOD OF MANUFACTURING THE SAME, PIEZOELECTRIC DEVICE, AND APPARATUS INCLUDING THE PIEZOELECTRIC DEVICE

    Additional title:

    PIEZOELEKTRISCHE MATERIALZUSAMMENSETZUNG, VERFAHREN ZU IHRER HERSTELLUNG, PIEZOELEKTRISCHE VORRICHTUNG UND VORRICHTUNG MIT DER PIEZOELEKTRISCHEN VORRICHTUNG
    COMPOSITION DE MATÉRIAU PIÉZOÉLECTRIQUE, SON PROCÉDÉ DE FABRICATION, DISPOSITIF PIÉZOÉLECTRIQUE ET APPAREIL COMPRENANT LE DISPOSITIF PIÉZOÉLECTRIQUE

    Contributors:

    LEE YONGWOO (author) / PARK SEUNGRYULL (author) / HAM YONG-SU (author) / KHO YUSEON (author) / SUNG SEUNGHYUN (author) / NAHM SAHN (author) / KIM DAE-SU (author) / SHIN HOSUNG (author) / EUM JAE MIN (author) / GO SU-HWAN (author)

    Publication date:

    2023-07-05

    Type of media:

    Patent

    Type of material:

    Electronic Resource

    Language:

    English

    Classification:

    IPC:  C04B Kalk , LIME / H10N

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