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Oxide sintered compact and sputtering target formed from said oxide sintered compact
An IGZO sintered compact composed of indium (In), gallium (Ga), zinc (Zn), oxygen (O) and unavoidable impurities, wherein the IGZO sintered compact has a flexural strength of 50 MPa or more, and a bulk resistance of 100 mΩcm or less. Provided is a sputtering target capable of suppressing the target cracks and reducing the generation of particles during deposition via DC sputtering, and forming favorable thin films.
Oxide sintered compact and sputtering target formed from said oxide sintered compact
An IGZO sintered compact composed of indium (In), gallium (Ga), zinc (Zn), oxygen (O) and unavoidable impurities, wherein the IGZO sintered compact has a flexural strength of 50 MPa or more, and a bulk resistance of 100 mΩcm or less. Provided is a sputtering target capable of suppressing the target cracks and reducing the generation of particles during deposition via DC sputtering, and forming favorable thin films.
Oxide sintered compact and sputtering target formed from said oxide sintered compact
YAMAGUCHI YOHEI (author) / KURIHARA TOSHIYA (author) / KAKUTA KOJI (author)
2018-12-25
Patent
Electronic Resource
English
Oxide sintered compact and sputtering target formed from said oxide sintered compact
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