A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
OXIDE SINTERED COMPACT AND SPUTTERING TARGET FORMED FROM SAID OXIDE SINTERED COMPACT
An IGZO sintered compact composed of indium (In), gallium (Ga), zinc (Zn), oxygen (O) and unavoidable impurities, wherein an average length of cracks existing in the IGZO sintered compact is 3 μm or more and 15 μm or less. Provided is a sputtering target capable of suppressing the target cracks and reducing the generation of particles during deposition via DC sputtering, and forming favorable thin films.
OXIDE SINTERED COMPACT AND SPUTTERING TARGET FORMED FROM SAID OXIDE SINTERED COMPACT
An IGZO sintered compact composed of indium (In), gallium (Ga), zinc (Zn), oxygen (O) and unavoidable impurities, wherein an average length of cracks existing in the IGZO sintered compact is 3 μm or more and 15 μm or less. Provided is a sputtering target capable of suppressing the target cracks and reducing the generation of particles during deposition via DC sputtering, and forming favorable thin films.
OXIDE SINTERED COMPACT AND SPUTTERING TARGET FORMED FROM SAID OXIDE SINTERED COMPACT
YAMAGUCHI YOHEI (author) / KAKUTA KOJI (author)
2018-03-08
Patent
Electronic Resource
English
Oxide sintered compact and sputtering target formed from said oxide sintered compact
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