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Oxide sintered body and sputtering target
An oxide sintered body has metal elements of In, Ga, Zn, and Sn and contains Ga2In6Sn2O16, ZnGa2O4, and InGaZnO4. The contents of In, Ga, Zn, and Sn in the oxide sintered body satisfy the relations [Ga]≥37 atomic %, [Sn]≤15 atomic %, and [Ga]/([In]+[Zn])≥0.7, where [In], [Ga], [Zn], and [Sn] represent ratios (atomic %) of In, Ga, Zn, and Sn with respect to all metal elements contained in the oxide sintered body, respectively.
Oxide sintered body and sputtering target
An oxide sintered body has metal elements of In, Ga, Zn, and Sn and contains Ga2In6Sn2O16, ZnGa2O4, and InGaZnO4. The contents of In, Ga, Zn, and Sn in the oxide sintered body satisfy the relations [Ga]≥37 atomic %, [Sn]≤15 atomic %, and [Ga]/([In]+[Zn])≥0.7, where [In], [Ga], [Zn], and [Sn] represent ratios (atomic %) of In, Ga, Zn, and Sn with respect to all metal elements contained in the oxide sintered body, respectively.
Oxide sintered body and sputtering target
NISHIYAMA KOHEI (author) / TAO YUKI (author)
2021-08-17
Patent
Electronic Resource
English
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