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Tunnel barrier layer, magnetoresistance effect element, method for manufacturing tunnel barrier layer, and insulating layer
A tunnel barrier layer includes a non-magnetic oxide, wherein a crystal structure of the tunnel barrier layer includes both an ordered spinel structure and a disordered spinel structure.
Tunnel barrier layer, magnetoresistance effect element, method for manufacturing tunnel barrier layer, and insulating layer
A tunnel barrier layer includes a non-magnetic oxide, wherein a crystal structure of the tunnel barrier layer includes both an ordered spinel structure and a disordered spinel structure.
Tunnel barrier layer, magnetoresistance effect element, method for manufacturing tunnel barrier layer, and insulating layer
ICHIKAWA SHINTO (author) / NAKADA KATSUYUKI (author)
2023-02-28
Patent
Electronic Resource
English
IPC:
H10N
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