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    Tunnel barrier layer, magnetoresistance effect element, and method for manufacturing tunnel barrier layer

    New search for: ICHIKAWA SHINTO
    New search for: NAKADA KATSUYUKI

    A tunnel barrier layer includes a non-magnetic oxide, wherein a crystal structure of the tunnel barrier layer includes both an ordered spinel structure and a disordered spinel structure.

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    Tunnel barrier layer, magnetoresistance effect element, and method for manufacturing tunnel barrier layer

    New search for: ICHIKAWA SHINTO
    New search for: NAKADA KATSUYUKI

    A tunnel barrier layer includes a non-magnetic oxide, wherein a crystal structure of the tunnel barrier layer includes both an ordered spinel structure and a disordered spinel structure.

    Access

    Download

    Tunnel barrier layer, magnetoresistance effect element, and method for manufacturing tunnel barrier layer

    New search for: ICHIKAWA SHINTO
    New search for: NAKADA KATSUYUKI

    A tunnel barrier layer includes a non-magnetic oxide, wherein a crystal structure of the tunnel barrier layer includes both an ordered spinel structure and a disordered spinel structure.

    Access

    Download

    Access

    Download

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Tunnel barrier layer, magnetoresistance effect element, and method for manufacturing tunnel barrier layer

    Contributors:

    ICHIKAWA SHINTO (author) / NAKADA KATSUYUKI (author)

    Publication date:

    2024-08-13

    Type of media:

    Patent

    Type of material:

    Electronic Resource

    Language:

    English

    Classification:

    IPC:  H10N

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