A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
A process for sintering silicon carbide is provided which includes the steps of providing a silicon carbide powder of silicon carbide granules; purifying the silicon carbide powder; subjecting the purified silicon carbide powder to a gel-casting process; removing the gel-cast part from the mold; drying the gel-cast part; obtaining a dried cast ceramic part (a green body) which is capable of green machining into a final desired shape; firing the green body in an oven at temperatures ranging from about 100° C. to about 1900° C. to remove or burn out any polymer remaining in the ceramic; and sintering the green body at temperatures ranging from about 1600° C. to less than about 2200° C.
A process for sintering silicon carbide is provided which includes the steps of providing a silicon carbide powder of silicon carbide granules; purifying the silicon carbide powder; subjecting the purified silicon carbide powder to a gel-casting process; removing the gel-cast part from the mold; drying the gel-cast part; obtaining a dried cast ceramic part (a green body) which is capable of green machining into a final desired shape; firing the green body in an oven at temperatures ranging from about 100° C. to about 1900° C. to remove or burn out any polymer remaining in the ceramic; and sintering the green body at temperatures ranging from about 1600° C. to less than about 2200° C.
Process for Sintering Silicon Carbide
ADAMS DALE (author)
2016-08-18
Patent
Electronic Resource
English