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Ce-DOPED PZT-BASED PIEZOELECTRIC FILM
A Ce-doped PZT-based piezoelectric film is provided which is formed of Ce-doped composite metal oxides represented by a general formula: PbzCexZryTi1-yO3. x, y, and z in the general formula satisfy a relationship of 0.005≦x≦0.05, a relationship of 0.40≦y≦0.55, and a relationship of 0.95≦z≦1.15, respectively. It is preferable that the hysteresis of the polarization quantity of the Ce-doped PZT-based piezoelectric film be shifted from the center of the hysteresis to a negative side by 4 kV/cm or more.
Ce-DOPED PZT-BASED PIEZOELECTRIC FILM
A Ce-doped PZT-based piezoelectric film is provided which is formed of Ce-doped composite metal oxides represented by a general formula: PbzCexZryTi1-yO3. x, y, and z in the general formula satisfy a relationship of 0.005≦x≦0.05, a relationship of 0.40≦y≦0.55, and a relationship of 0.95≦z≦1.15, respectively. It is preferable that the hysteresis of the polarization quantity of the Ce-doped PZT-based piezoelectric film be shifted from the center of the hysteresis to a negative side by 4 kV/cm or more.
Ce-DOPED PZT-BASED PIEZOELECTRIC FILM
DOI TOSHIHIRO (author) / SAKURAI HIDEAKI (author) / SOYAMA NOBUYUKI (author)
2017-04-20
Patent
Electronic Resource
English
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