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Yttrium Aluminum Silicate Glass Ceramic Coating For Semiconductor Chamber Apparatus
Articles may be protected against halide plasma, by applying a rare earth-containing glaze to the surface of the article. The glaze may be a coating comprising; 20 to 90 mol % SiO2, 0 to 60 mol % Al2O3, 10 to 80 mol % rare earth oxides and/or rare earth fluorides (REX), wherein SiO2+Al2O3+REX≥60 mol %.
Yttrium Aluminum Silicate Glass Ceramic Coating For Semiconductor Chamber Apparatus
Articles may be protected against halide plasma, by applying a rare earth-containing glaze to the surface of the article. The glaze may be a coating comprising; 20 to 90 mol % SiO2, 0 to 60 mol % Al2O3, 10 to 80 mol % rare earth oxides and/or rare earth fluorides (REX), wherein SiO2+Al2O3+REX≥60 mol %.
Yttrium Aluminum Silicate Glass Ceramic Coating For Semiconductor Chamber Apparatus
LEE CHENGTSIN (author)
2019-08-22
Patent
Electronic Resource
English
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