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    METHOD FOR PRODUCING LAYERS OF SILICON CARBIDE

    The invention relates to a method for producing thin layers of silicon carbide by means of a solution or dispersion containing carbon and silicon.

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    METHOD FOR PRODUCING LAYERS OF SILICON CARBIDE

    The invention relates to a method for producing thin layers of silicon carbide by means of a solution or dispersion containing carbon and silicon.

    Access

    Download

    METHOD FOR PRODUCING LAYERS OF SILICON CARBIDE

    The invention relates to a method for producing thin layers of silicon carbide by means of a solution or dispersion containing carbon and silicon.

    Access

    Download

    Access

    Download

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    METHOD FOR PRODUCING LAYERS OF SILICON CARBIDE

    Contributors:

    GREULICH-WEBER SIEGMUND (author) / SCHLEICHER-TAPPESER RÜDIGER (author)

    Publication date:

    2020-05-28

    Type of media:

    Patent

    Type of material:

    Electronic Resource

    Language:

    English

    Classification:

    IPC:  C04B Kalk , LIME / C30B SINGLE-CRYSTAL GROWTH , Züchten von Einkristallen

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