Fachinformationsdienst BAUdigital

Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik

    MEMBER FOR USE IN PLASMA PROCESSING DEVICE, AND PLASMA PROCESSING DEVICE PROVIDED THEREWITH

    Neue Suche nach: ISHIKAWA KAZUHIRO
    Neue Suche nach: HINO TAKASHI
    Neue Suche nach: SAITO SHUICHI

    A member for use in a plasma processing device of the disclosure includes a base material, and a film of an oxide of a rare earth element on at least a part of the base material. A coefficient of variation of thickness of the film is 0.04 or less. A plasma processing device of the disclosure includes the member for use in a plasma processing device. In the member for use in a plasma processing device according to the disclosure, variation in film thickness is small.

    Zugriff

    Download

    Zugriff

    Download

    Seitennavigation

    Dokumentinformationen
    Ähnliche Titel

    Exportieren, teilen und zitieren

    MEMBER FOR USE IN PLASMA PROCESSING DEVICE, AND PLASMA PROCESSING DEVICE PROVIDED THEREWITH

    Neue Suche nach: ISHIKAWA KAZUHIRO
    Neue Suche nach: HINO TAKASHI
    Neue Suche nach: SAITO SHUICHI

    A member for use in a plasma processing device of the disclosure includes a base material, and a film of an oxide of a rare earth element on at least a part of the base material. A coefficient of variation of thickness of the film is 0.04 or less. A plasma processing device of the disclosure includes the member for use in a plasma processing device. In the member for use in a plasma processing device according to the disclosure, variation in film thickness is small.

    Zugriff

    Download

    MEMBER FOR USE IN PLASMA PROCESSING DEVICE, AND PLASMA PROCESSING DEVICE PROVIDED THEREWITH

    Neue Suche nach: ISHIKAWA KAZUHIRO
    Neue Suche nach: HINO TAKASHI
    Neue Suche nach: SAITO SHUICHI

    A member for use in a plasma processing device of the disclosure includes a base material, and a film of an oxide of a rare earth element on at least a part of the base material. A coefficient of variation of thickness of the film is 0.04 or less. A plasma processing device of the disclosure includes the member for use in a plasma processing device. In the member for use in a plasma processing device according to the disclosure, variation in film thickness is small.

    Zugriff

    Download

    Zugriff

    Download

    Seitennavigation

    Dokumentinformationen
    Ähnliche Titel

    Exportieren, teilen und zitieren

    Dokumentinformationen
    Titel:

    MEMBER FOR USE IN PLASMA PROCESSING DEVICE, AND PLASMA PROCESSING DEVICE PROVIDED THEREWITH

    Beteiligte:

    ISHIKAWA KAZUHIRO (Autor:in) / HINO TAKASHI (Autor:in) / SAITO SHUICHI (Autor:in)

    Erscheinungsdatum:

    24.12.2020

    Medientyp:

    Patent

    Format:

    Elektronische Ressource

    Sprache:

    Englisch

    Klassifikation:

    IPC:  H01J Elektrische Entladungsröhren oder Entladungslampen , ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS / C04B Kalk , LIME / C23C Beschichten metallischer Werkstoffe , COATING METALLIC MATERIAL

    Ähnliche Titel

    Plasma processing device member and plasma processing device provided with same

    ISHIKAWA KAZUHIRO / HINO TAKASHI / SAITO SHUICHI | Europäisches Patentamt | 2022

    Freier Zugriff

    MEMBER FOR USE IN PLASMA TREATMENT DEVICE, AND PLASMA TREATMENT DEVICE PROVIDED THEREWITH

    ISHIKAWA KAZUHIRO / HINO TAKASHI / SAITO SHUICHI | Europäisches Patentamt | 2021

    Freier Zugriff

    MEMBER FOR USE IN PLASMA TREATMENT DEVICE, AND PLASMA TREATMENT DEVICE PROVIDED THEREWITH

    ISHIKAWA KAZUHIRO / HINO TAKASHI / SAITO SHUICHI | Europäisches Patentamt | 2024

    Freier Zugriff

    MEMBER FOR USE IN PLASMA TREATMENT DEVICE, AND PLASMA TREATMENT DEVICE PROVIDED THEREWITH

    ISHIKAWA KAZUHIRO / HINO TAKASHI / SAITO SHUICHI | Europäisches Patentamt | 2020

    Freier Zugriff

    MEMBER FOR USE IN PLASMA TREATMENT DEVICE, AND PLASMA TREATMENT DEVICE PROVIDED THEREWITH

    ISHIKAWA KAZUHIRO / HINO TAKASHI / SAITO SHUICHI | Europäisches Patentamt | 2020

    Freier Zugriff
    Nach oben