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COMPOSITE STRUCTURE AND SEMICONDUCTOR MANUFACTURING DEVICE PROVIDED WITH THE COMPOSITE STRUCTURE
Disclosed are a member for a semiconductor manufacturing device and a semiconductor manufacturing device that can enhance low-particle generation. The composite structure having a substrate and a structure which is provided on the substrate and has a surface exposed to a plasma environment, in which the structure contains Y4Al2O9 as a main component, and lattice constants and/or intensity ratio of specific X-ray diffraction peak meet specific conditions, has excellent low-particle generation so that this may be suitably used as a member for a semiconductor manufacturing device.
COMPOSITE STRUCTURE AND SEMICONDUCTOR MANUFACTURING DEVICE PROVIDED WITH THE COMPOSITE STRUCTURE
Disclosed are a member for a semiconductor manufacturing device and a semiconductor manufacturing device that can enhance low-particle generation. The composite structure having a substrate and a structure which is provided on the substrate and has a surface exposed to a plasma environment, in which the structure contains Y4Al2O9 as a main component, and lattice constants and/or intensity ratio of specific X-ray diffraction peak meet specific conditions, has excellent low-particle generation so that this may be suitably used as a member for a semiconductor manufacturing device.
COMPOSITE STRUCTURE AND SEMICONDUCTOR MANUFACTURING DEVICE PROVIDED WITH THE COMPOSITE STRUCTURE
ASHIZAWA HIROAKI (author) / TAKIZAWA RYOTO (author)
2024-05-23
Patent
Electronic Resource
English
COMPOSITE STRUCTURE AND SEMICONDUCTOR MANUFACTURING DEVICE PROVIDED WITH THE COMPOSITE STRUCTURE
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