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PIEZOELECTRIC FILM, METHOD OF PRODUCING PIEZOELECTRIC FILM, PIEZOELECTRIC ELEMENT, AND PIEZOELECTRIC DEVICE
A piezoelectric film contains a piezoelectric material having a wurtzite-type crystal structure as a main component, and an additive element containing Kr, wherein the piezoelectric material contains a component selected from the group consisting of Zn, Al, Ga, Cd, and Si, as an electropositive element, and wherein a ratio of a content of Kr element to a content of contained elements in the piezoelectric material is in a range from 0.01 atm % to 0.05 atm %.
PIEZOELECTRIC FILM, METHOD OF PRODUCING PIEZOELECTRIC FILM, PIEZOELECTRIC ELEMENT, AND PIEZOELECTRIC DEVICE
A piezoelectric film contains a piezoelectric material having a wurtzite-type crystal structure as a main component, and an additive element containing Kr, wherein the piezoelectric material contains a component selected from the group consisting of Zn, Al, Ga, Cd, and Si, as an electropositive element, and wherein a ratio of a content of Kr element to a content of contained elements in the piezoelectric material is in a range from 0.01 atm % to 0.05 atm %.
PIEZOELECTRIC FILM, METHOD OF PRODUCING PIEZOELECTRIC FILM, PIEZOELECTRIC ELEMENT, AND PIEZOELECTRIC DEVICE
TSUBURAOKA GAKU (author) / NAKAMURA DAISUKE (author) / ISHIKAWA TAKETO (author) / MACHINAGA HIRONOBU (author)
2024-05-23
Patent
Electronic Resource
English
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