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ETCHING COMPOSITION FOR SILICON NITRIDE LAYER AND METHOD FOR ETCHING SILICON NITRIDE LAYER USING THE SAME
An etching composition for a silicon nitride layer includes phosphoric acid, a compound represented by Chemical Formula 1, a compound represented by Chemical Formula 2, and water. In addition, a method for etching a silicon nitride layer includes contacting a surface of a silicon nitride layer with the etching composition for a silicon nitride layer.(R1)a(R2)b(CH3)Si—(OR3)(3-a-b) Chemical Formula 1(R5)c(R6)d(R7)Si—(OR8)(3-c-d) Chemical Formula 2
ETCHING COMPOSITION FOR SILICON NITRIDE LAYER AND METHOD FOR ETCHING SILICON NITRIDE LAYER USING THE SAME
An etching composition for a silicon nitride layer includes phosphoric acid, a compound represented by Chemical Formula 1, a compound represented by Chemical Formula 2, and water. In addition, a method for etching a silicon nitride layer includes contacting a surface of a silicon nitride layer with the etching composition for a silicon nitride layer.(R1)a(R2)b(CH3)Si—(OR3)(3-a-b) Chemical Formula 1(R5)c(R6)d(R7)Si—(OR8)(3-c-d) Chemical Formula 2
ETCHING COMPOSITION FOR SILICON NITRIDE LAYER AND METHOD FOR ETCHING SILICON NITRIDE LAYER USING THE SAME
PARK GYEONGHUN (author)
2024-11-28
Patent
Electronic Resource
English
Anisotropic etching of silicon nitride at low temperatures by synchrotron radiation
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