Fachinformationsdienst BAUdigital

Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik

    ETCHING COMPOSITION FOR SILICON NITRIDE LAYER AND METHOD FOR ETCHING SILICON NITRIDE LAYER USING THE SAME

    Neue Suche nach: PARK GYEONGHUN

    An etching composition for a silicon nitride layer includes phosphoric acid, a compound represented by Chemical Formula 1, a compound represented by Chemical Formula 2, and water. In addition, a method for etching a silicon nitride layer includes contacting a surface of a silicon nitride layer with the etching composition for a silicon nitride layer.(R1)a(R2)b(CH3)Si—(OR3)(3-a-b)  Chemical Formula 1(R5)c(R6)d(R7)Si—(OR8)(3-c-d)  Chemical Formula 2

    Zugriff

    Download

    Zugriff

    Download

    Seitennavigation

    Dokumentinformationen
    Ähnliche Titel

    Exportieren, teilen und zitieren

    ETCHING COMPOSITION FOR SILICON NITRIDE LAYER AND METHOD FOR ETCHING SILICON NITRIDE LAYER USING THE SAME

    Neue Suche nach: PARK GYEONGHUN

    An etching composition for a silicon nitride layer includes phosphoric acid, a compound represented by Chemical Formula 1, a compound represented by Chemical Formula 2, and water. In addition, a method for etching a silicon nitride layer includes contacting a surface of a silicon nitride layer with the etching composition for a silicon nitride layer.(R1)a(R2)b(CH3)Si—(OR3)(3-a-b)  Chemical Formula 1(R5)c(R6)d(R7)Si—(OR8)(3-c-d)  Chemical Formula 2

    Zugriff

    Download

    ETCHING COMPOSITION FOR SILICON NITRIDE LAYER AND METHOD FOR ETCHING SILICON NITRIDE LAYER USING THE SAME

    Neue Suche nach: PARK GYEONGHUN

    An etching composition for a silicon nitride layer includes phosphoric acid, a compound represented by Chemical Formula 1, a compound represented by Chemical Formula 2, and water. In addition, a method for etching a silicon nitride layer includes contacting a surface of a silicon nitride layer with the etching composition for a silicon nitride layer.(R1)a(R2)b(CH3)Si—(OR3)(3-a-b)  Chemical Formula 1(R5)c(R6)d(R7)Si—(OR8)(3-c-d)  Chemical Formula 2

    Zugriff

    Download

    Zugriff

    Download

    Seitennavigation

    Dokumentinformationen
    Ähnliche Titel

    Exportieren, teilen und zitieren

    Dokumentinformationen
    Titel:

    ETCHING COMPOSITION FOR SILICON NITRIDE LAYER AND METHOD FOR ETCHING SILICON NITRIDE LAYER USING THE SAME

    Beteiligte:

    PARK GYEONGHUN (Autor:in)

    Erscheinungsdatum:

    28.11.2024

    Medientyp:

    Patent

    Format:

    Elektronische Ressource

    Sprache:

    Englisch

    Klassifikation:

    IPC:  C09K Materialien für Anwendungen, soweit nicht anderweitig vorgesehen , MATERIALS FOR APPLICATIONS NOT OTHERWISE PROVIDED FOR / C04B Kalk , LIME

    Ähnliche Titel

    Anisotropic etching of silicon nitride at low temperatures by synchrotron radiation

    Kitamura, O. / Goto, T. / Terakado, S. et al. | British Library Online Contents | 1994

    SILICON NITRIDE POWDER PRODUCTION METHOD, SILICON NITRIDE POWDER, SILICON NITRIDE SINTERED BODY AND CIRCUIT SUBSTRATE USING SAME

    SHIBATA KOJI / OHMARU TAKUJI / YAMAO TAKESHI et al. | Europäisches Patentamt | 2018

    Freier Zugriff

    SILICON NITRIDE SUBSTRATE AND SILICON NITRIDE CIRCUIT BOARD USING SAME

    SANO TAKASHI / NAKAYAMA NORITAKA / AOKI KATSUYUKI | Europäisches Patentamt | 2023

    Freier Zugriff

    Silicon nitride powder production method, silicon nitride powder, silicon nitride sintered body and circuit substrate using same

    SHIBATA KOJI / OHMARU TAKUJI / YAMAO TAKESHI et al. | Europäisches Patentamt | 2015

    Freier Zugriff

    SILICON NITRIDE POWDER PRODUCTION METHOD SILICON NITRIDE POWDER SILICON NITRIDE SINTERED BODY AND CIRCUIT SUBSTRATE USING SAME

    Europäisches Patentamt | 2016

    Freier Zugriff
    Nach oben