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Piezoelectric thin film, piezoelectric element, and manufacturing method thereof
Provided are a piezoelectric thin film having good piezoelectricity in which a rhombohedral structure and a tetragonal structure are mixed, and a piezoelectric element using the piezoelectric thin film. The piezoelectric thin film includes a perovskite type metal oxide, in which the perovskite type metal oxide is a mixed crystal system of at least a rhombohedral structure and a tetragonal structure, and a ratio between an a-axis lattice parameter and a c-axis lattice parameter of the tetragonal structure satisfies 1.15≦c/a≦1.30. The piezoelectric element includes on a substrate: the above-mentioned piezoelectric thin film; and a pair of electrodes provided in contact with the piezoelectric thin film.
Piezoelectric thin film, piezoelectric element, and manufacturing method thereof
Provided are a piezoelectric thin film having good piezoelectricity in which a rhombohedral structure and a tetragonal structure are mixed, and a piezoelectric element using the piezoelectric thin film. The piezoelectric thin film includes a perovskite type metal oxide, in which the perovskite type metal oxide is a mixed crystal system of at least a rhombohedral structure and a tetragonal structure, and a ratio between an a-axis lattice parameter and a c-axis lattice parameter of the tetragonal structure satisfies 1.15≦c/a≦1.30. The piezoelectric element includes on a substrate: the above-mentioned piezoelectric thin film; and a pair of electrodes provided in contact with the piezoelectric thin film.
Piezoelectric thin film, piezoelectric element, and manufacturing method thereof
KUBOTA MAKOTO (author) / TAKEDA KENICHI (author) / HAYASHI JUMPEI (author) / SHIMADA MIKIO (author) / SHIMAKAWA YUICHI (author) / AZUMA MASAKI (author) / NAKAMURA YOSHITAKA (author) / KAWAI MASANORI (author)
2016-10-04
Patent
Electronic Resource
English
PIEZOELECTRIC THIN FILM, PIEZOELECTRIC ELEMENT, AND MANUFACTURING METHOD THEREOF
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