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Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Study on charge trap layer in nanocrystal charge trap MOSFET
In this study, we have investigated the performance two types of nonvolatile MOSFET devices in terms of the performance and reliability. Either SRO (Silicon Rich Oxide) or SRON (Silicon Rich OxyNitride) trap layer was used as a charge trap layer. The trap layers were deposited using ALD (Atomic Layer Deposition) method. The transistor with SRON trap layer combined with thinner tunneling oxide yields larger memory window but worse retention characteristics.
Study on charge trap layer in nanocrystal charge trap MOSFET
In this study, we have investigated the performance two types of nonvolatile MOSFET devices in terms of the performance and reliability. Either SRO (Silicon Rich Oxide) or SRON (Silicon Rich OxyNitride) trap layer was used as a charge trap layer. The trap layers were deposited using ALD (Atomic Layer Deposition) method. The transistor with SRON trap layer combined with thinner tunneling oxide yields larger memory window but worse retention characteristics.
Study on charge trap layer in nanocrystal charge trap MOSFET
Seung Su Cho, (Autor:in) / Kyong Hee Joo, (Autor:in) / In-Seok Yeo, (Autor:in) / IlSub Chung, (Autor:in)
01.10.2006
735438 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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