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Effects of HCl/H~2 pre-growth etching on quality of 6H-SiC epitaxial layers
Effects of HCl/H~2 pre-growth etching on quality of 6H-SiC epitaxial layers
Effects of HCl/H~2 pre-growth etching on quality of 6H-SiC epitaxial layers
Asai, R. (Autor:in) / Golecki, I. / Engineering Foundation
High-temperature electronic materials, devices and sensors conference ; 1998 ; San Diego; CA
01.01.1998
6 pages
IEEE cat no 98EX132
Aufsatz (Konferenz)
Englisch
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