Features of buried dielectric layers: ion beam synthesis in silicon by a high temperature sequential oxygen and nitrogen implantation with substoichiometric doses: Fid-Bau Portal

Features of buried dielectric layers: ion beam synthesis in silicon by a high temperature sequential oxygen and nitrogen implantation with substoichiometric doses

Charnyi, L. A. / Danilin, A. B. / Drakin, K. A. / Malinin, A. A.

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Features of buried dielectric layers: ion beam synthesis in silicon by a high temperature sequential oxygen and nitrogen implantation with substoichiometric doses

Charnyi, L. A. / Danilin, A. B. / Drakin, K. A. / Malinin, A. A.

Features of buried dielectric layers: ion beam synthesis in silicon by a high temperature sequential oxygen and nitrogen implantation with substoichiometric doses

Charnyi, L. A. / Danilin, A. B. / Drakin, K. A. / Malinin, A. A.

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Check availability in my library

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Document information

Title:

Features of buried dielectric layers: ion beam synthesis in silicon by a high temperature sequential oxygen and nitrogen implantation with substoichiometric doses

Contributors:

Charnyi, L. A. (author) / Danilin, A. B. (author) / Drakin, K. A. (author) / Malinin, A. A. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 15 ; 244

Publication date:

1992-01-01

Size:

244 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

Unknown

Classification:

DDC: 620.11

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