Temperature dependence of synchrotron radiation induced growth initiation in the molecular beam chemical vapor deposition of Al on a SiO~2 surface: Fid-Bau Portal

Temperature dependence of synchrotron radiation induced growth initiation in the molecular beam chemical vapor deposition of Al on a SiO~2 surface

Uesugi, F. / Nishiyama, I.

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Temperature dependence of synchrotron radiation induced growth initiation in the molecular beam chemical vapor deposition of Al on a SiO~2 surface

Uesugi, F. / Nishiyama, I.

Temperature dependence of synchrotron radiation induced growth initiation in the molecular beam chemical vapor deposition of Al on a SiO~2 surface

Uesugi, F. / Nishiyama, I.

Zugriff

Zugriff über TIB

Verfügbarkeit in meiner Bibliothek prüfen

Bestellung bei Subito €

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Ähnliche Titel

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Titel:

Temperature dependence of synchrotron radiation induced growth initiation in the molecular beam chemical vapor deposition of Al on a SiO~2 surface

Beteiligte:

Uesugi, F. (Autor:in) / Nishiyama, I. (Autor:in)

Erschienen in:

APPLIED SURFACE SCIENCE ; 69 ; 27

Erscheinungsdatum:

01.01.1993

Format / Umfang:

27 pages

ISSN:

0169-4332

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Unbekannt

Klassifikation:

DDC: 621.35

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Photon energy dependence of synchrotron radiation induced growth suppression and initiation in Al chemical vapor deposition II. Surface analysis by Auger electron spectroscopy

Nishiyama, I. / Uesugi, F. | British Library Online Contents | 1996

Direct projection patterning of aluminum on the SiO~2 surface by using synchrotron radiation induced growth initiation of thermal chemical vapor deposition

Uesugi, F. / Nishiyama, I. | British Library Online Contents | 1992

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Choi, H.-Z. / Kang, E.-G. / Lee, S.-W. et al. | British Library Online Contents | 2005

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