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Temperature dependence of synchrotron radiation induced growth initiation in the molecular beam chemical vapor deposition of Al on a SiO~2 surface
Temperature dependence of synchrotron radiation induced growth initiation in the molecular beam chemical vapor deposition of Al on a SiO~2 surface
Temperature dependence of synchrotron radiation induced growth initiation in the molecular beam chemical vapor deposition of Al on a SiO~2 surface
Uesugi, F. (author) / Nishiyama, I. (author)
APPLIED SURFACE SCIENCE ; 69 ; 27
1993-01-01
27 pages
Article (Journal)
Unknown
DDC:
621.35
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