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Two-temperature technique for plasma-enhanced chemical vapour deposition growth of silicon-nitride on InP
Two-temperature technique for plasma-enhanced chemical vapour deposition growth of silicon-nitride on InP
Two-temperature technique for plasma-enhanced chemical vapour deposition growth of silicon-nitride on InP
Her, J. (Autor:in) / Lim, H. (Autor:in) / Kim, C. H. (Autor:in) / Han, I. K. (Autor:in)
JOURNAL OF MATERIALS SCIENCE LETTERS ; 13 ; 898
01.01.1994
898 pages
Aufsatz (Zeitschrift)
Unbekannt
DDC:
620.11
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