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Two-temperature technique for plasma-enhanced chemical vapour deposition growth of silicon-nitride on InP
Two-temperature technique for plasma-enhanced chemical vapour deposition growth of silicon-nitride on InP
Two-temperature technique for plasma-enhanced chemical vapour deposition growth of silicon-nitride on InP
Her, J. (author) / Lim, H. (author) / Kim, C. H. (author) / Han, I. K. (author)
JOURNAL OF MATERIALS SCIENCE LETTERS ; 13 ; 898
1994-01-01
898 pages
Article (Journal)
Unknown
DDC:
620.11
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