An annealing study of defects induced by electron irradiation of Czochralski-grown Si using a positron lifetime technique: Fid-Bau Portal

An annealing study of defects induced by electron irradiation of Czochralski-grown Si using a positron lifetime technique

Kawasuso, A. / Hasegawa, M. / Suezawa, M. / Yamaguchi, S.

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An annealing study of defects induced by electron irradiation of Czochralski-grown Si using a positron lifetime technique

Kawasuso, A. / Hasegawa, M. / Suezawa, M. / Yamaguchi, S.

An annealing study of defects induced by electron irradiation of Czochralski-grown Si using a positron lifetime technique

Kawasuso, A. / Hasegawa, M. / Suezawa, M. / Yamaguchi, S.

Zugriff

Zugriff über TIB

Verfügbarkeit in meiner Bibliothek prüfen

Bestellung bei Subito €

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Titel:

An annealing study of defects induced by electron irradiation of Czochralski-grown Si using a positron lifetime technique

Beteiligte:

Kawasuso, A. (Autor:in) / Hasegawa, M. (Autor:in) / Suezawa, M. (Autor:in) / Yamaguchi, S. (Autor:in) / Doyama, M. / Akahane, T. / Fujinami, M.

Erschienen in:

Proceedings of the Sixth International Workshop on Slow-Positron Beam Techniques for Solids and Surfaces ; 280

APPLIED SURFACE SCIENCE ; 85

Erscheinungsdatum:

01.01.1995

Format / Umfang:

280 pages

ISSN:

0169-4332

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Unbekannt

Klassifikation:

DDC: 621.35

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