An annealing study of defects induced by electron irradiation of Czochralski-grown Si using a positron lifetime technique: Fid-Bau Portal

An annealing study of defects induced by electron irradiation of Czochralski-grown Si using a positron lifetime technique

Kawasuso, A. / Hasegawa, M. / Suezawa, M. / Yamaguchi, S.

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An annealing study of defects induced by electron irradiation of Czochralski-grown Si using a positron lifetime technique

Kawasuso, A. / Hasegawa, M. / Suezawa, M. / Yamaguchi, S.

An annealing study of defects induced by electron irradiation of Czochralski-grown Si using a positron lifetime technique

Kawasuso, A. / Hasegawa, M. / Suezawa, M. / Yamaguchi, S.

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Check availability in my library

Order at Subito €

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Document information

Title:

An annealing study of defects induced by electron irradiation of Czochralski-grown Si using a positron lifetime technique

Contributors:

Kawasuso, A. (author) / Hasegawa, M. (author) / Suezawa, M. (author) / Yamaguchi, S. (author) / Doyama, M. / Akahane, T. / Fujinami, M.

Published in:

Proceedings of the Sixth International Workshop on Slow-Positron Beam Techniques for Solids and Surfaces ; 280

APPLIED SURFACE SCIENCE ; 85

Publication date:

1995-01-01

Size:

280 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

Unknown

Classification:

DDC: 621.35

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