Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Influence of Point Defect Concentration in Growing Cz-Si on the Formation Temperature of the Defects Affecting Gate Oxide Integrity
Influence of Point Defect Concentration in Growing Cz-Si on the Formation Temperature of the Defects Affecting Gate Oxide Integrity
Influence of Point Defect Concentration in Growing Cz-Si on the Formation Temperature of the Defects Affecting Gate Oxide Integrity
Iwasaki, T. (Autor:in) / Harada, H. (Autor:in) / Haga, H. (Autor:in)
MATERIALS SCIENCE FORUM ; 1731-1736
01.01.1995
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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