Internal gettering for germanium-doped Czochralski silicon: Treated by rapid-thermal-anneal based processing simulation

Chen, J. / Yang, D. / Ma, X. et al. | British Library Online Contents | 2009

Effect of Hydrogen Anneal on Electric Behavior in NCZ Silicon

Wang, X.-q. / Yang, D.-r. / Yu, X.-g. et al. | British Library Online Contents | 2003

Damage Relaxation Pre-Activation Anneal in Al-Implanted SiC

Bahng, W. / Song, G. H. / Kim, N. K. et al. | British Library Online Contents | 2003

4H-SiC DMOSFETs Processed Using Graphite Capped Implant Activation Anneal

Fedison, J. B. / Cowen, C. S. / Garrett, J. L. et al. | British Library Online Contents | 2006

Investigation of sputtered indium-tin oxide/silicon interfaces: ion damage, hydrogen passivation and low-temperature anneal

Kuwano, K. / Ashok, S. | British Library Online Contents | 1997