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Internal gettering for germanium-doped Czochralski silicon: Treated by rapid-thermal-anneal based processing simulation
Internal gettering for germanium-doped Czochralski silicon: Treated by rapid-thermal-anneal based processing simulation
Internal gettering for germanium-doped Czochralski silicon: Treated by rapid-thermal-anneal based processing simulation
MATERIALS SCIENCE AND ENGINEERING B ADVANCED FUNCTIONAL SOLID STATE MATERIALS ; 159-160 ; 235-238
01.01.2009
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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