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Damage Relaxation Pre-Activation Anneal in Al-Implanted SiC
Damage Relaxation Pre-Activation Anneal in Al-Implanted SiC
Damage Relaxation Pre-Activation Anneal in Al-Implanted SiC
Bahng, W. (Autor:in) / Song, G. H. (Autor:in) / Kim, N. K. (Autor:in) / Kim, S. C. (Autor:in) / Seo, K. S. (Autor:in) / Kim, H. W. (Autor:in) / Kim, E. D. (Autor:in) / Bergman, P. / Janzen, E.
01.01.2003
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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