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Investigation of the dosage effect on the activation of arsenic-and boron-implanted low-pressure chemical vapor deposition (LPCVD) amorphous-silicon films
Investigation of the dosage effect on the activation of arsenic-and boron-implanted low-pressure chemical vapor deposition (LPCVD) amorphous-silicon films
Investigation of the dosage effect on the activation of arsenic-and boron-implanted low-pressure chemical vapor deposition (LPCVD) amorphous-silicon films
Wang, F.-S. (Autor:in) / Tsai, M.-J. (Autor:in) / Lai, W.-K. (Autor:in) / Cheng, H.-C. (Autor:in)
APPLIED SURFACE SCIENCE ; 92 ; 372-377
01.01.1996
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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