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Defect behaviors in n-channel power VDMOSFETs during HEFS and thermal post-HEFS annealing
Defect behaviors in n-channel power VDMOSFETs during HEFS and thermal post-HEFS annealing
Defect behaviors in n-channel power VDMOSFETs during HEFS and thermal post-HEFS annealing
Ristic, G. S. (Autor:in) / Pejovic, M. M. (Autor:in) / Jaksic, A. B. (Autor:in)
APPLIED SURFACE SCIENCE ; 252 ; 3023-3032
01.01.2006
10 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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