Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
The effect of buffer layers on structural quality of Si~0~.~7Ge~0~.~3 layers grown on Si(001) substrates by molecular beam epitaxy
The effect of buffer layers on structural quality of Si~0~.~7Ge~0~.~3 layers grown on Si(001) substrates by molecular beam epitaxy
The effect of buffer layers on structural quality of Si~0~.~7Ge~0~.~3 layers grown on Si(001) substrates by molecular beam epitaxy
Obata, T. (Autor:in) / Komeda, K. (Autor:in) / Nakao, T. (Autor:in) / Ueba, H. (Autor:in) / Tatsuyama, C. (Autor:in)
APPLIED SURFACE SCIENCE ; 117/118 ; 507-511
01.01.1997
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Influence of buffer layers on the structural properties of molecular beam epitaxy grown GaN layers
| British Library Online Contents | 1999
Si:Er:O layers grown by molecular beam epitaxy: structural, electrical and optical properties
| British Library Online Contents | 2001
| British Library Online Contents | 2001
Microstructure of GaN Layers Grown onto (001) and (111) GaAs Substrates by Molecular Beam Epitaxy
| British Library Online Contents | 2003
Investigation of whisker defects on molecular beam epitaxy grown GaAs layers
| British Library Online Contents | 1996