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Wafer direct bonding of compound semiconductors and silicon at room temperature by the surface activated bonding method
Wafer direct bonding of compound semiconductors and silicon at room temperature by the surface activated bonding method
Wafer direct bonding of compound semiconductors and silicon at room temperature by the surface activated bonding method
Taek Ryong Chung (Autor:in) / Yang, L. (Autor:in) / Hosoda, N. (Autor:in) / Takagi, H. (Autor:in) / Suga, T. (Autor:in)
APPLIED SURFACE SCIENCE ; 117/118 ; 808-812
01.01.1997
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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