Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Vacancy Defects in Low-Temperature-Grown GaAs Observed by Continuous and Pulsed Slow Positrons
Vacancy Defects in Low-Temperature-Grown GaAs Observed by Continuous and Pulsed Slow Positrons
Vacancy Defects in Low-Temperature-Grown GaAs Observed by Continuous and Pulsed Slow Positrons
Gebauer, J. (Autor:in) / Krause-Rehberg, R. (Autor:in) / Eichler, S. (Autor:in) / Bauer-Kugelmann, W. (Autor:in) / Koegel, G. (Autor:in) / Triftshaeuser, W. (Autor:in) / Luysberg, M. (Autor:in) / Sohn, H. (Autor:in) / Weber, E. R. (Autor:in) / Jean, Y. C.
01.01.1997
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Characterization of vacancy-like defects in boron-implanted silicon with slow positrons
British Library Online Contents | 1997
|Applying slow positrons to the study of ion implantation induced defects in GaAs
British Library Online Contents | 1999
|Defects in Cu and Ag overlayers epitaxially grown on a Ru(0001) substrate studied by slow positrons
British Library Online Contents | 1997
|Gallium vacancy related defects in silicon doped GaAs grown at low temperatures
British Library Online Contents | 1993
|Thermal Evolution of Defects in H-Implanted Silicon Investigated by Slow Positrons
British Library Online Contents | 1995
|