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Incorporation of the D-Center in SiC Controlled either by Coimplantation of Si/B and C/B or by Site-Competition Epitaxy
Incorporation of the D-Center in SiC Controlled either by Coimplantation of Si/B and C/B or by Site-Competition Epitaxy
Incorporation of the D-Center in SiC Controlled either by Coimplantation of Si/B and C/B or by Site-Competition Epitaxy
Frank, T. (Autor:in) / Troffer, T. (Autor:in) / Pensl, G. (Autor:in) / Nordell, N. (Autor:in) / Karlsson, S. (Autor:in) / Schoener, A. (Autor:in)
MATERIALS SCIENCE FORUM ; 264/268 ; 681-684
01.01.1998
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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