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Incorporation of the D-Center in SiC Controlled either by Coimplantation of Si/B and C/B or by Site-Competition Epitaxy
Incorporation of the D-Center in SiC Controlled either by Coimplantation of Si/B and C/B or by Site-Competition Epitaxy
Incorporation of the D-Center in SiC Controlled either by Coimplantation of Si/B and C/B or by Site-Competition Epitaxy
Frank, T. (author) / Troffer, T. (author) / Pensl, G. (author) / Nordell, N. (author) / Karlsson, S. (author) / Schoener, A. (author)
MATERIALS SCIENCE FORUM ; 264/268 ; 681-684
1998-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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