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A High Temperature Stable Metallization Scheme for SiC-Technology Operating at 400C in Air
A High Temperature Stable Metallization Scheme for SiC-Technology Operating at 400C in Air
A High Temperature Stable Metallization Scheme for SiC-Technology Operating at 400C in Air
Gottfried, K. (Autor:in) / Fritsche, H. (Autor:in) / Kriz, J. (Autor:in) / Leibelt, J. (Autor:in) / Kaufmann, C. (Autor:in) / Rudolf, F. (Autor:in) / Gessner, T. (Autor:in)
MATERIALS SCIENCE FORUM ; 264/268 ; 795-798
01.01.1998
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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