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Growth of SiC Epitaxial Layers in a Vertical Cold Wall Reactor Suited for High Voltage Applications
Growth of SiC Epitaxial Layers in a Vertical Cold Wall Reactor Suited for High Voltage Applications
Growth of SiC Epitaxial Layers in a Vertical Cold Wall Reactor Suited for High Voltage Applications
Rupp, R. (Autor:in) / Wiedenhofer, A. (Autor:in) / Friedrichs, P. (Autor:in) / Peters, D. (Autor:in) / Schoerner, R. (Autor:in) / Stephani, D. (Autor:in) / Pensl, G. / Morkoc, H. / Monemar, B. / Janzen, E.
01.01.1998
8 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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