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Growth of SiC Epitaxial Layers in a Vertical Cold Wall Reactor Suited for High Voltage Applications
Growth of SiC Epitaxial Layers in a Vertical Cold Wall Reactor Suited for High Voltage Applications
Growth of SiC Epitaxial Layers in a Vertical Cold Wall Reactor Suited for High Voltage Applications
Rupp, R. (author) / Wiedenhofer, A. (author) / Friedrichs, P. (author) / Peters, D. (author) / Schoerner, R. (author) / Stephani, D. (author) / Pensl, G. / Morkoc, H. / Monemar, B. / Janzen, E.
1998-01-01
8 pages
Article (Journal)
English
DDC:
620.11
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