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Homoepitaxial Growth of 4H- and 6H-SiC in a Commercial Horizontal LPCVD Reactor
Homoepitaxial Growth of 4H- and 6H-SiC in a Commercial Horizontal LPCVD Reactor
Homoepitaxial Growth of 4H- and 6H-SiC in a Commercial Horizontal LPCVD Reactor
Wischmeyer, F. (Autor:in) / Leidich, D. (Autor:in) / Niemann, E. (Autor:in) / Pensl, G. / Morkoc, H. / Monemar, B. / Janzen, E.
01.01.1998
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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