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In Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD
In Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD
In Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD
Sun, G.S. (Autor:in) / Zhao, Y.M. (Autor:in) / Wang, L. (Autor:in) / Zhao, W.S. (Autor:in) / Liu, X.F. (Autor:in) / Ji, G. (Autor:in) / Zeng, Y.P. (Autor:in)
MATERIALS SCIENCE FORUM ; 600/603 ; 147-150
01.01.2009
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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