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Silicon-kicking-out mechanism in initial oxide formation on hydrogen-terminated silicon (100) surfaces
Silicon-kicking-out mechanism in initial oxide formation on hydrogen-terminated silicon (100) surfaces
Silicon-kicking-out mechanism in initial oxide formation on hydrogen-terminated silicon (100) surfaces
Kageshima, H. (Autor:in) / Shiraishi, K. (Autor:in)
APPLIED SURFACE SCIENCE ; 130-132 ; 176-181
01.01.1998
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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