Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Selective dry etching using inductively coupled plasmas - Part II. InN/GaN and InN/AlN
Selective dry etching using inductively coupled plasmas - Part II. InN/GaN and InN/AlN
Selective dry etching using inductively coupled plasmas - Part II. InN/GaN and InN/AlN
Hays, D.C. (Autor:in) / Cho, H. (Autor:in) / Jung, K.B. (Autor:in) / Hahn, Y.B. (Autor:in) / Abernathy, C.R. (Autor:in) / Pearton, S.J. (Autor:in) / Ren, F. (Autor:in) / Hun, J. (Autor:in) / Shul, R.J. (Autor:in)
APPLIED SURFACE SCIENCE ; 147 ; 134-139
01.01.1999
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Selective dry etching using inductively coupled plasmas - Part I. GaAs/AlGaAs and GaAs/InGaP
British Library Online Contents | 1999
|Kinetics of etching in inductively coupled plasmas
British Library Online Contents | 2004
|Characteristics of Ir etching using Ar/Cl2 inductively coupled plasmas
British Library Online Contents | 2005
|Dry etching characteristics of GaN using Cl2/BCl3 inductively coupled plasmas
British Library Online Contents | 2010
|British Library Online Contents | 2002
|