Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Inductively coupled plasma etching of III-V semiconductors in BCl"3-based chemistries - I. GaAs, GaN, GaP, GaSb and AlGaAs
Inductively coupled plasma etching of III-V semiconductors in BCl"3-based chemistries - I. GaAs, GaN, GaP, GaSb and AlGaAs
Inductively coupled plasma etching of III-V semiconductors in BCl"3-based chemistries - I. GaAs, GaN, GaP, GaSb and AlGaAs
Maeda, T. (Autor:in) / Lee, J.W. (Autor:in) / Shul, R.J. (Autor:in) / Han, J. (Autor:in) / Hong, J. (Autor:in) / Lambers, E.S. (Autor:in) / Pearton, S.J. (Autor:in) / Abernathy, C.R. (Autor:in) / Hobson, W.S. (Autor:in)
APPLIED SURFACE SCIENCE ; 143 ; 174-182
01.01.1999
9 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Inductively coupled plasma etching of GaAs in Cl2/Ar, Cl2/Ar/O2 chemistries with photoresist mask
British Library Online Contents | 2015
|Inductively coupled plasma etching of GaAs in Cl2/Ar, Cl2/Ar/O2 chemistries with photoresist mask
British Library Online Contents | 2015
|British Library Online Contents | 1999
|Selective dry etching using inductively coupled plasmas - Part I. GaAs/AlGaAs and GaAs/InGaP
British Library Online Contents | 1999
|British Library Online Contents | 1999
|