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Slow and fast positron studies of defects created in silicon by swift Kr ions
Slow and fast positron studies of defects created in silicon by swift Kr ions
Slow and fast positron studies of defects created in silicon by swift Kr ions
Liszkay, L. (Autor:in) / Havancsak, K. (Autor:in) / Kajcsos, Z. (Autor:in)
APPLIED SURFACE SCIENCE ; 149 ; 181-187
01.01.1999
7 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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