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Slow and fast positron studies of defects created in silicon by swift Kr ions
Slow and fast positron studies of defects created in silicon by swift Kr ions
Slow and fast positron studies of defects created in silicon by swift Kr ions
Liszkay, L. (author) / Havancsak, K. (author) / Kajcsos, Z. (author)
APPLIED SURFACE SCIENCE ; 149 ; 181-187
1999-01-01
7 pages
Article (Journal)
English
DDC:
621.35
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