Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Annealing experiments on supercritical Si"1"-"xGe"x layers grown by RPCVD
Annealing experiments on supercritical Si"1"-"xGe"x layers grown by RPCVD
Annealing experiments on supercritical Si"1"-"xGe"x layers grown by RPCVD
Grimm, K. (Autor:in) / Vescan, L. (Autor:in) / Visser, C.C.G. (Autor:in) / Nanver, L.K. (Autor:in) / Luth, H. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 69-70 ; 261 - 265
01.01.2000
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Fundamentals of Ge1−xSnx and SiyGe1−x-ySnx RPCVD epitaxy
British Library Online Contents | 2017
|British Library Online Contents | 2014
|Selective vapor phase etching of SiGe by HCl in a RPCVD reactor
British Library Online Contents | 2008
|British Library Online Contents | 2014
|Evidence of stress relaxation in thermally grown oxide layers - experiments and modelling
British Library Online Contents | 1998
|