Injection of point defects during annealing of low energy As implanted silicon

Tsamis, C. / Skarlatos, D. / Valamontes, V. et al. | British Library Online Contents | 2005

Formation and annealing behavior of prominent point defects in MeV ion implanted n-type epitaxial Si

Vines, L. / Monakhov, E. V. / Jensen, J. et al. | British Library Online Contents | 2009

Damage annealing and dopant activation in Al ion implanted -SiC

Canut, B. / Ramos, S. / Roger, J.-A. et al. | British Library Online Contents | 1997

Influence of Annealing Conditions on Dopant Activation of Si^+ and Mg^+ Implanted GaN

Suvkhanov, A. / Parikh, N. / Usov, I. et al. | British Library Online Contents | 2000

High temperature annealing of Er implanted GaN

Alves, E. / Monteiro, T. / Soares, J. et al. | British Library Online Contents | 2001