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Influence of Annealing Conditions on Dopant Activation of Si^+ and Mg^+ Implanted GaN
Influence of Annealing Conditions on Dopant Activation of Si^+ and Mg^+ Implanted GaN
Influence of Annealing Conditions on Dopant Activation of Si^+ and Mg^+ Implanted GaN
Suvkhanov, A. (Autor:in) / Parikh, N. (Autor:in) / Usov, I. (Autor:in) / Hunn, J. (Autor:in) / Withrow, S. (Autor:in) / Thomson, D. (Autor:in) / Gehrke, T. (Autor:in) / Davis, R. F. (Autor:in) / Krasnobaev, L. Y. (Autor:in)
MATERIALS SCIENCE FORUM ; 338/342 ; 1615-1618
01.01.2000
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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