Formation and annealing of defects during high-temperature processing of ion-implanted epitaxial silicon: the role of dopant implants: Fid-Bau Portal

Formation and annealing of defects during high-temperature processing of ion-implanted epitaxial silicon: the role of dopant implants

Giri, P.K. / Galvagno, G. / La Ferla, A. / Rimini, E. / Coffa, S. / Raineri, V.

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Formation and annealing of defects during high-temperature processing of ion-implanted epitaxial silicon: the role of dopant implants

Giri, P.K. / Galvagno, G. / La Ferla, A. / Rimini, E. / Coffa, S. / Raineri, V.

Formation and annealing of defects during high-temperature processing of ion-implanted epitaxial silicon: the role of dopant implants

Giri, P.K. / Galvagno, G. / La Ferla, A. / Rimini, E. / Coffa, S. / Raineri, V.

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Document information

Title:

Formation and annealing of defects during high-temperature processing of ion-implanted epitaxial silicon: the role of dopant implants

Contributors:

Giri, P.K. (author) / Galvagno, G. (author) / La Ferla, A. (author) / Rimini, E. (author) / Coffa, S. (author) / Raineri, V. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 71 ; 186 - 191

Publication date:

2000-01-01

Size:

6 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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